SiC SBD
Compared with ordinary PN junction barrier diodes, silicon carbide Schottky diodes have the advantages of reduced conduction voltage, fast switching speed, zero reverse recovery, and high temperature resistance. Silicon carbide Schottky diodes can be used in photovoltaic inverters, high-frequency power supplies, high-performance server power supplies, charging pile charging modules and other fields.
Part Numbers Qualification Vds Rds(On)(Tj=25°c) Id(On)(Tj=25°c) Vgs Ptot(Tj=25°c) Qg Operating Junction Temperature Package
TCM80S120B industrial grade 1200V 79mΩ 35A 18V 190W 79nC -55°C to 175°C TO-247-3
TCM80S120C industrial grade 1200V 79mΩ 35A 18V 190W 77nC -55°C to 175°C TO-247-4
TCM90S120B industrial grade 1200V 88mΩ 31A 18V 175W 62nC -55°C to 175°C TO-247-3
TCM90S120C industrial grade 1200V 88mΩ 31A 18V 175W 62nC -55°C to 175°C TO-247-4
TCM30S65B industrial grade 650V 30mΩ 55A 18V 233W 53nC -55°C to 175°C TO-247-3
TCM30S65C industrial grade 650V 30mΩ 55A 18V 233W 53nC -55°C to 175°C TO-247-4
TCM40S65B industrial grade 650V 39mΩ 43A 18V 213W 46nC -55°C to 175°C TO-247-3
TCM60S65B industrial grade 650V 60mΩ 35A 18V 163W 39nC -55°C to 175°C TO-247-3
TCM60S65C industrial grade 650V 60mΩ 35A 18V 163W 39nC -55°C to 175°C TO-247-4
TCM80S65B industrial grade 650V 78mΩ 23A 18V 126W 25nC -55°C to 175°C TO-247-3
TCM80S65C industrial grade 650V 78mΩ 23A 18V 126W 25nC -55°C to 175°C TO-247-4
TCM110S65B industrial grade 650V 109mΩ 20A 18V 99W 19nC -55°C to 175°C TO-247-3
TCM110S65C industrial grade 650V 109mΩ 20A 18V 99W 19nC -55°C to 175°C TO-247-4
SiC MOSFETs
In the development and application of SiC MOSFETs, compared with Si MOSFETs of the same power level, the on-resistance and switching loss of SiC MOSFETs are greatly reduced, and are suitable for higher operating frequencies. sex.
Part Numbers Qualification Vrrm If(On)(Tj=150°c) Ifsm(On)(Tp=10ms) Vf(Tj=25°c) Vf(Tj=150°c) Ir(Tj=25°c) Ir(Tj=150°c) Qc Package
TCD05S120D industrial grade 1200V 5 A 51A 1.6V 2.1V 3μA 16μA 27nC TO-220-2
TCD10S120A industrial grade 1200V 10A 98A 1.7V 2.3V 5μA 29μA 67nC TO-247-2
TCD10S120B industrial grade 1200V 10A 98A 1.7V 2.3V 5μA 29μA 67nC TO-247-3
TCD15S120A industrial grade 1200V 15A 150A 1.6V 2.2V 8μA 45μA 97nC TO-247-2
TCD15S120B industrial grade 1200V 15A 150A 1.6V 2.2V 8μA 45μA 97nC TO-247-3
TCD20S120D industrial grade 1200V 20A 199A 1.7V 2.4V 12μA 54μA 97nC TO-220-2
TCD20S120E industrial grade 1200V 20A 199A 1.7V 2.4V 12μA 54μA 97nC TO-220-3
TCD30S120A industrial grade 1200V 30A 238A 1.4V 1.8V 20μA 102μA 184nC TO-247-2
TCD30S120B industrial grade 1200V 30A 238A 1.4V 1.8V 20μA 102μA 184nC TO-247-3
TCD02S65D industrial grade 650V 2A 18A 1.6V 1.9V 0.16μA 0.5μA 5nC TO-220-2
TCD02S65E industrial grade 650V 2A 18A 1.6V 1.9V 0.16μA 0.5μA 5nC TO-220-3
TCD04S65D industrial grade 650V 4A 39A 1.6V 1.9V 0.3μA 1.1μA 8nC TO-220-2
TCD04S65E industrial grade 650V 4A 39A 1.6V 1.9V 0.3μA 1.1μA 8nC TO-220-3
TCD06S65D industrial grade 650V 6A 55A 1.6V 1.9V 0.5μA 1.4μA 12nC TO-220-2
TCD06S65E industrial grade 650V 6A 55A 1.6V 1.9V 0.5μA 1.4μA 12nC TO-220-3
TCD08S65D industrial grade 650V 8A 65A 1.6V 2.0V 0.6μA 1.9μA 15nC TO-220-2
TCD08S65E industrial grade 650V 8A 65A 1.6V 2.0V 0.6μA 1.9μA 15nC TO-220-3
TCD10S65D industrial grade 650V 10A 83A 1.6V 1.9V 0.7μA 2.3μA 19nC TO-220-2
TCD10S65E industrial grade 650V 10A 83A 1.6V 1.9V 0.7μA 2.3μA 19nC TO-220-3
TCD12S65D industrial grade 650V 12A 97A 1.6V 1.9V 0.8μA 2.6μA 22nC TO-220-2
TCD12S65E industrial grade 650V 12A 97A 1.6V 1.9V 0.8μA 2.6μA 22nC TO-220-3
TCD16S65D industrial grade 650V 16A 125A 1.6V 1.9V 1.02μA 3.8μA 27nC TO-220-2
Application Plan
1.On board OBC/DCDC (6.6KW)
2.On board OBC/DCDC (11KW)
3.Charging station Reference Design
4.Energy storage
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PV Inverter
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server power
With the continuous in-depth application of 5G, cloud and AI, as well as the investment in New Infrastructure, a large number of data centers have been established around the country, and then servers have been used. It is estimated that the global service sales will exceed 13 million units in 2022. Server power supply is an important component of the server system. Usually, a server requires at least two server power supplies to meet redundant backup requirements. As power consumption gradually increases, the server will use up to 8 power supplies, and the market is full of prospects.Figure 1 shows the application of SiC devices in Boost power factor correction circuits in server power supplies. Compared with traditional Si devices, SiC power electronic devices have broad application prospects in fields with high frequency, high conversion efficiency, and demanding operating temperature requirements due to their low conduction resistance, high breakdown voltage, fast switching speed, and good thermal conductivity.
